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gan
英[ɡæn]||||||美[ɡæn]
- 1 . GaN thin films were prepared on Si ( 111 ) substrates by electrophoretic deposition ( EPD ) technique.
- 采用 电泳沉积 法在Si ( 111 ) 衬底上制备出了GaN薄膜.
来自互联网
- 2 . This is the GaN LED chip and Yttrium Aluminum Garnet ( YAG ) package together cause.
- 这种LED是将GaN芯片和钇铝石榴石 ( YAG ) 封装在一起做成.
来自互联网
- 3 . Cross - sectional TEM reveals that the threading dislocation ( TD ) density in the ELO - GaN region is significantly reduced.
- 透射电子显微镜 ( TEM ) 的研究结果表明,横向外延区域GaN的位错密度明显减小.
来自互联网
- 4 . Recent advances in heteroepitaxial growth of high quality GaN films by MOCVD and HVPE is reviewed.
- 介绍了采用MOCVD或HVPE技术高质量异质外延生长GaN薄膜的发展状况.
来自互联网
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英语单词,1
英[ɡæn]
美[ɡæn]
双语例句
- 1 . GaN thin films were prepared on Si ( 111 ) substrates by electrophoretic deposition ( EPD ) technique.
- 采用 电泳沉积 法在Si ( 111 ) 衬底上制备出了GaN薄膜.
来自互联网
- 2 . This is the GaN LED chip and Yttrium Aluminum Garnet ( YAG ) package together cause.
- 这种LED是将GaN芯片和钇铝石榴石 ( YAG ) 封装在一起做成.
来自互联网
- 3 . Cross - sectional TEM reveals that the threading dislocation ( TD ) density in the ELO - GaN region is significantly reduced.
- 透射电子显微镜 ( TEM ) 的研究结果表明,横向外延区域GaN的位错密度明显减小.
来自互联网
- 4 . Recent advances in heteroepitaxial growth of high quality GaN films by MOCVD and HVPE is reviewed.
- 介绍了采用MOCVD或HVPE技术高质量异质外延生长GaN薄膜的发展状况.
来自互联网
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